Metal Lift Off

Designed for removing metals and photoresist from wafers. A nano‑scale, high‑pressure atomizing nozzle breaks the cleaning solution into ultra‑fine droplets, enabling rapid reaction with the photoresist. Simply rotate‑rinse to strip away both metal and photoresist; once dissolved, the photoresist becomes floating particles that are spun off the wafer by centrifugal force. The patented nozzle can be tuned for different processes and requirements, allowing intensified rinsing on specific target areas.

Functionality and Specifications

Cleaning Chamber / Chemical Supply System

Standard Configuration:
Maximum rotation speed: 3000 rpm

Process chemicals: Organic / Acid / Alkaline

Manual adjustment of spray nozzle angle

Programmable X-axis movement of swing arm

Automatic chemical refill system

Chemical low-level warning

Filtration system

Water resistivity meter


Optional Configuration:
Filter replacement detection system

Ultrasonic soaking system

Chemical recycling system

Temperature control system
CO₂ Bubbler

Wafer Identification & Transfer Standard Configuration

Standard Configuration:
Wafer thickness: 200–750 μm

Wafer warpage: ±0.5 mm

Wafer centering device

Manual loading/unloading

Barcode reader

RFID reader

EFEM (Equipment Front End Module)


Optional Configuration:
Wafer thickness <200 μm or >750 μm

Wafer warpage: ±6 mm

OCR system

Safety Monitoring Standard Configuration

Standard Configuration:
Class 100 cleanroom compliance

SEMI certified

Magnetic reed switch on access doors

Leak detection system

Cleanroom-grade components


Optional Configuration:
Up to Class 2 cleanroom compliance

Hazardous gas detectors

Co2 fire suppression system

SECS/GEM interface

Experimental Results